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Composite Transistors
XN01558
Silicon NPN epitaxial planar transistor
For low-frequency amplification Features
* Two elements incorporated into one package (Emitter-coupled transistors) * Reduction of the mounting area and assembly cost by one half
3 2.90+0.20 -0.05 1.90.1 (0.95) (0.95) 4 5
1.50+0.25 -0.05 2.8+0.2 -0.3
Unit: mm
0.16+0.10 -0.06
2 0.30+0.10 -0.05 10
1
(0.65)
Basic Part Number of Element
* 2SD2623 x 2 elements
1.1+0.2 -0.1
Parameter Rating of element Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Total Total power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg
Rating 25 20 12 0.5 1 300 150 -55 to +150
Unit V V V A A mW C C
1: Collector (Tr1) 2: Collector (Tr2) 3: Base (Tr2) EIAJ: SC-74A
0 to 0.1
Absolute Maximum Ratings Ta = 25C
4: Emitter 5: Base (Tr1) Mini5-G1 Package
Marking Symbol: 4Z Internal Connection
3 4 5
Tr2
Electrical Characteristics Ta = 25C 3C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio *1 hFE ratio*1, 2 Collector to emitter saturation voltage *1 Base to emitter saturation voltage *1 Gain bandwidth product Collector output capacitance On resistance
*3
2 Conditions Min 25 20 12 Typ
Symbol VCBO VCEO VEBO ICBO hFE hFE(Small/Large) VCE(sat) VBE(sat) fT Cob Ron
1.1+0.3 -0.1
Tr1
1 Max Unit V V V 100 nA
IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IC = 10 A, IC = 0 VCB = 25 V, IE = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 0.5 A IC = 0.5 A, IB = 20 mA IC = 0.5 A, IB = 50 mA VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz
1 k
200 0.5 0.99 0.14
800
0.4 1.2
V V MHz pF
200 10 1.0
Note) *1: Pulse measurement *2: Ratio between one and another device *3: Ron start resistance test circuit
IB = 1 mA VB VV VB x 1 000 () V A - VB
f = 1 kHz V = 0.3 V
VA
Ron =
0.40.2
5
Publication date: June 2002
SJJ00264AED
1
XN01558
PT Ta
350 300 250 200 150 100 50 0
0.9 0.8 0.7 IB = 4.0 mA 3.5 mA 3.0 mA 2.5 mA 2.0 mA 1.5 mA 0.5 0.4 0.3 0.5 mA 0.2 0.1 0 Ta = 25C 0 1 2 3 4 5 6 1.0 mA
IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
1
VCE(sat) IC
IC / IB = 25
Total power dissipation PT (mW)
Collector current IC (A)
0.6
0.1
Ta = 75C 25C -25C
0.01
0
40
80
120
160
0.001 0.1
1
10
100
1 000
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (mA)
VBE(sat) IC
10
hFE IC
600 540 VCE = 2 V
100
Cob VCB
Collector output capacitance Cob (pF)
f = 1 MHz Ta = 25C
Base to emitter saturation voltage VBE(sat) (V)
IC / IB = 10
Forward current transfer ratio hFE
480 420 360 300 240 180 120 60
Ta = 75C
1
25C
Ta = -25C
25C
75C
-25C
10
0.1
0.01
1
10
102
103
104
105
0 0.1
1
10
100
1 000
1
0
5
10
15
20
25
30
Collector current IC (A)
Collector current IC (mA)
Collector to base voltage VCB (V)
2
SJJ00264AED
Request for your special attention and precautions in using the technical information and semiconductors described in this book
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this book is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this book. (4) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 MAY

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